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HM High Voltage N Channel MOSFET

HM High Voltage N Channel MOSFET

Brand HM
Product origin CHINA
Delivery time 1 WEEK
Supply capacity 1000000

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Substitutions Made in China for TI, Diodes, Infineon, ST, muRATA, Nippon Chemi-con, TDK, NDK, UTC, ONSEMI, ADI, NXP etc.

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Jim Deng

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HM Low Voltage SJ (super-junction) Channel MOSFET

Model No.	Channel	VDS (Max)	VGS	VTH (Typ)	ID (Max)	IDM (MAX)	RDS(on) (Max)	Package	Substitution for below items
HM0565	N沟道	650V	30V	3V	0.5A	2A	20Ω	SOT23-3L	AO3160/AO3162
HM1N65MR	N沟道	650V	30V	3V	1A	4A	17Ω	SOT23-3L	AO3160/AO3162
HM1N60	N沟道	600V	30V	3V	1.3A	5A	8.5Ω	TO-92/SOT-89 SOT-223 TO-251/TO-252	FQP1N60/FQN1N60/ UTC1N60/STP1N60
HM2N60	N沟道	600V	30V	3V	2A	6A	4.5Ω	TO-251/TO-252 TO-220/TO-220F	FQP2N60/FQN2N60/ UTC2N60/STP2N60/2SK3067
HM4N60/B/R	N沟道	600V	30V	3V	4A	16A	2.4Ω	TO-251/TO-252 TO-220/TO-220F SOT-223	FQP4N60/FQN4N60/ UTC4N60/STP4N60
HM5N60/B	N沟道	600V	30V	3V	5A	20A	2.0Ω	TO-251/TO-252 TO-220/TO-220F	FQP5N60/FQN5N60/ UTC5N60/STP5N60
HM7N60/B	N沟道	600V	30V	3V	7A	28A	1.2Ω	TO-220/TO-220F	FQP7N60/FQN7N60/ UTC7N60/STP7N60
HM7N60I/K	N沟道	600V	30V	3V	7A	28A	1.2Ω	TO-251/TO-252	FQP7N60/FQN7N60/ UTC7N60/STP7N60
HM8N60/B	N沟道	600V	30V	3V	8A	32A	1.0Ω	TO-220/TO-220F	FQP8N60/FQN8N60/ UTC8N60/STP8N60
HM10N60/B/D	N沟道	600V	30V	3V	9.5A	40A	0.75Ω	TO-220/TO-220F TO-263	FQP10N60/FQN10N60/ UTC10N60/STP10N60
HM12N60/B/D	N沟道	600V	30V	3V	12A	48A	0.65Ω	TO-220/TO-220F TO-263	FQP12N60/FQN12N60/ UTC12N60/STP12N60
HM16N60/F	N沟道	600V	30V	3V	16A	64A	0.50Ω	TO-220/TO-220F	FQP16N60/FQN16N60/ UTC16N60/STP16N60
HM20N60/F/A	N沟道	600V	30V	3V	20A	80A	0.36Ω	TO-220/TO-220F TO-3P	FQP20N60/FQN20N60/ UTC20N60/STP20N60
HM25N60A	N沟道	600V	30V	3V	25A	75A	0.2Ω	TO-3P	FCP25N60/STF25N60
HM2N65R/PR/K	N沟道	650V	30V	3V	2A	6A	7.8Ω	SOT-223/SOT-89 TO-252	FQP2N65/FQN2N65/ UTC2N65/STP2N65
HM4N65/B	N沟道	650V	30V	3V	4A	16A	3Ω	TO-251/TO-252 TO-220/TO-220F	FQP4N65/FQN4N65/ UTC4N65/STP4N65
HM4N65R	N沟道	650V	30V	3V	4A	16A	2.4Ω	SOT-223	FQP4N65/FQN4N65/ UTC4N65/STP4N65
HM5N65/F/K	N沟道	650V	30V	3V	5A	20A	3Ω	TO-220/ TO-220F/TO-252	FQP5N65/FQN5N65/ UTC5N65/STP5N65
HM6N65I	N沟道	650V	30V	3V	6A	24A	2.5Ω	TO-251	FQP6N65/FQA6N65/FQB6N65 SVF6N65/IXTH6N65/UTC6N65
HM7N65/B	N沟道	650V	30V	3V	7A	28A	1.26Ω	TO-220/TO-220F	FQP7N65/FQN7N65/ UTC7N65/STP7N65
HM7N65I/K	N沟道	650V	30V	3V	7A	28A	1.35Ω	TO-251/TO-252	FQP7N65/FQN7N65/ UTC7N65/STP7N65
HM8N65/F/K	N沟道	650V	30V	3V	8A	32A	1.26Ω	TO-220/TO-220F/ TO-252	FQP8N65/FQN8N65/ UTC8N65/STP8N65
HM10N65/B/D	N沟道	650V	30V	3V	10A	40A	0.85Ω	TO-220/TO-220F TO-263	FQP10N65/FQN10N65/ UTC10N65/STP10N65
HM12N65/B/D	N沟道	650V	30V	3V	12A	48A	0.75Ω	TO-220/TO-220F TO-263	FQP12N65/FQN12N65/ UTC12N65/STP12N65
HM16N65/F	N沟道	650V	30V	3V	16A	64A	0.51Ω	TO-220/TO-220F	FQP16N65/FQN16N65/ UTC16N65/STP16N65
HM20N65F/A	N沟道	650V	30V	3V	20A	80A	0.50Ω	TO-220F/TO-3P	FQP20N65/FQN20N65/ UTC20N65/STP20N65
HM25N65A	N沟道	650V	30V	3V	25A	75A	0.25Ω	TO-3P	FQP25N65/FQPF25N65
HM1N50MR	N沟道	500V	30V	3V	1.0A	3A	9.2Ω	SOT23-3L	FQD1N50/STP1N50/UTC1N50
HM2N50R/PR	N沟道	500V	30V	3V	2.0A	4A	5.0Ω	SOT-223/SOT-89	FQD2N50/STP2N50/UTC2N50
HM5N50R/K	N沟道	500V	30V	3V	5.0A	20A	1.5Ω	SOT-223/TO-252	IRF830/FQD5N50 STP5N50/UTC5N50
HM9N50K	N沟道	500V	30V	3V	9A	27A	0.95Ω	TO-252	IRF840/FQP9N50/ STP9N50/UTC9N50
HM13N50/F	N沟道	500V	30V	3V	13A	52A	0.48Ω	TO-220/TO-220F	FQP13N50/FQN13N50/ UTC13N50/STP13N50
HM15N50/F/D	N沟道	500V	30V	3.5V	15A	60A	0.35Ω	TO-220/TO-220F TO-263	FQP15N50/FQN15N50/ UTC15N50/STP15N50
HM16N50/F	N沟道	500V	30V	3V	16A	64A	0.3Ω	TO-220/TO-220F	FQP16N50/FQN16N50/ UTC16N50/STP16N50
HM18N50A/F	N沟道	500V	30V	3V	18A	64A	0.24Ω	TO-3P/TO-220F	FQP18N50/FQN18N50/ UTC18N50/STP18N50
HM20N50F/A	N沟道	500V	30V	3V	20A	80A	0.26Ω	TO-220F/TO-3P	FQP20N50/FQN20N50/ UTC20N50/STP20N50
HM24N50A	N沟道	500V	30V	3V	25A	101A	0.17Ω	TO-3P	FQP24N50/FQN24N50/ UTC24N50/STP24N50
HM25N50F/A	N沟道	500V	20V	3V	25A	100A	0.21Ω	TO-220F/TO-3P	FQP25N50/FQN25N50/ UTC25N50/STP25N50
HM1N70R/PR	N沟道	700V	30V	3V	1A	4A	10.5Ω	SOT-223/SOT-89	FQP1N70/FQN1N70 UTC1N70/STP1N70
HM2N70R/L/I/K	N沟道	700V	30V	3V	2A	8A	5.5Ω	SOT-223/TO-251S TO-251/TO-252	FQP2N70/FQN2N70 UTC2N70/STP2N70
HM3N70I/K	N沟道	700V	30V	3V	3A	12A	3Ω	TO-251/TO-252	FQP3N70/FQN3N70 UTC3N70/STP3N70
HM4N70/F/I/K	N沟道	700V	30V	3V	4A	16A	2.8Ω	TO-220/TO-220F TO-251/TO-252	FQP4N70/FQA4N70/FQB4N70 SVF4N70/IXTH4N70/UTC4N7
HM6N70	N沟道	700V	30V	3V	6A	24A	1.8Ω	TO-220/TO-220F TO-251/TO-252	FQP6N70/FQA6N70/FQB6N70 SVF6N70/IXTH6N70/UTC6N70
HM8N70F/I/K	N沟道	700V	30V	3V	8A	32A	1.2Ω	TO-220F/TO-251 TO-252	FQP8N70/FQA8N70/FQB8N70 SVF8N70/IXTH8N70/UTC8N70
HM9N70/F/D	N沟道	700V	30V	3.5V	9A	36A	1.0Ω	TO-220/TO-220F TO-263	FQP9N70/FQA9N70/FQB9N70 SVF9N70/WFW9N70/UTC9N70
HM10N70/F	N沟道	700V	20V	3V	10A	40A	0.90Ω	TO-220/TO-220F	FQP10N70/FQA10N70/ FQB10N70/SVF10N70/ WFW10N70/UTC10N70
HM11N70/F	N沟道	700V	30V	3V	11A	44A	0.95Ω	TO-220/TO-220F	FQP11N70/FQA11N70/ FQB11N70/SVF11N70/ WFW11N70/UTC11N70
HM18N70F/A	N沟道	700V	30V	3.5V	18A	72A	0.45Ω	TO-220F/TO-3P	FQP18N70/FQA18N70/ FQB18N70/SVF18N70/ WFW18N70/UTC18N70
HM3N80/F/I/K	N沟道	800V	30V	3V	3A	12A	4.0Ω	TO-220/TO-220F TO-251/TO-252	FQP3N80/FQN3N80/ UTC3N80/STP3N80
HM6N80K	N沟道	800V	30V	4V	6A	24A	1.8Ω	TO-252	FQP6N80/FQN6N80/ UTC6N80/STP6N80
HM7N80/F/D	N沟道	800V	30V	3V	7A	28A	1.9Ω	TO-220/TO-220F TO-263	FQP7N80/FQN7N80/ UTC7N80/STP7N80
HM10N80F/A	N沟道	800V	30V	3V	10A	40A	1.0Ω	TO220F/TO-3P	FQP10N80/FQA10N80/ UTC10N80/STP10N80
HM3N90/F/I/K	N沟道	900V	30V	3V	3A	12A	5Ω	TO-220/TO-220F TO-251/TO-252	FQP3N90/FQA3N90/ UTC3N90/STP3N90
HM4N90I	N沟道	900V	30V	4V	4A	16A	2.6Ω	TO-251	FQP4N90/FQA4N90/ UTC4N90/STP4N90
HM5N90/F	N沟道	900V	30V	3V	5A	20A	2.1Ω	TO-220/TO-220F	FQP5N90/FQN5N90 /UTC5N90/STP5N90
HM6N90/F	N沟道	900V	30V	4V	6A	24A	1.85Ω	TO-220/TO-220F	FQP6N90/FQN6N90 /UTC6N90/STP6N90
HM9N90A/F	N沟道	900V	30V	3V	9A	36A	1.4Ω	TO-3P/TO-220F	FQP9N90/FQN9N90/ UTC9N90/STP9N90
HM01N100PR	N沟道	1000V	30V	3V	0.1A	0.3A	46Ω	SOT-89
HM3N100/F/D	N沟道	1000V	30V	3.5V	3A	12A	3.5Ω	TO-220/TO-220F/ TO-263	IXTA3N100/AOTF3N100/ MTP3N100
HM8N100F/A	N沟道	1000V	30V	3.5V	8A	24A	1.18Ω	TO-220F/TO-3P	8N100
HM3N120/F/A	N沟道	1200V	30V	4V	3A	12A	5.1Ω	TO-220/TO-220F TO-3P	IXTA3N120
HM3N150/F/A	N沟道	1500V	30V	4V	3A	12A	5Ω	TO-220/TO-220F TO-3P	STP3N150/STWN150
HM4N150T	N沟道	1500V	20V	4V	4A	12A	7Ω	TO-247	STW4N150
HM830/F	N沟道	500V	30V	3V	4.5A	18A	1.5Ω	TO-220/TO-220F	IRF830
HM840/F	N沟道	500V	30V	3V	8A	32A	0.8Ω	TO-220/TO-220F	IRF840
HM3N40R/PR	N沟道	400V	30V	3V	3A	9A	2.8Ω	SOT-223//SOT-89	FQP3N40/STP3N40/UTC3N40 PFB3N40/FTP3N40/WFP3N40
HM730/F/K	N沟道	400V	30V	3V	5.5A	22A	1Ω	TO-220/TO-220F TO-252	IRF730
HM740/F/K	N沟道	400V	30V	3V	10A	40A	0.54Ω	TO-220/TO-220F TO-252	IRF740
HM18N40/F/A	N沟道	400V	30V	3V	18A	72A	0.26Ω	TO-220/TO-220F TO-3P	SIF18N40/JCS18N40/ FQP18N40/STP18N40/ UTC18N40/PFB18N40 KIA18N40/FTP18N40/ WFP18N40
HM19N40	N沟道	400V	30V	3V	19A	76A	0.3Ω	TO-220	SIF19N40/JCS19N40/ FQP19N40/STP19N40/ UTC19N40/PFB19N40 KIA19N40/FTP19N40/ WFP19N40
HM3N30R/PR	N沟道	300V	25V	2.7V	3A	12A	2.6Ω	SOT-223/SOT-89	FQP3N30/STP3N30/UTC3N30 PFB3N30/FTP3N30/WFP3N30
HM5N30R/PR/K	N沟道	300V	25V	2.7V	5A	15A	1.2Ω	SOT-223/SOT-89 TO-252	FQP5N30/STP5N30/UTC5N30 PFB5N30/FTP5N30/WFP5N30
HM2N25	N沟道	250V	20V	1.9V	2A	8A	0.95Ω	TO-92	FQP2N25/STP2N25/UTC2N25 PFB2N25/FTP2N25/WFP2N25
HM2N25MR	N沟道	250V	20V	2.5V	2A	10A	1.3Ω	SOT23-3L
HM3N25I/K/R	N沟道	250V	20V	3V	3A	12A	1Ω	TO-251/TO-252 SOT-223	FQP3N25/STP3N25/UTC3N25 PFB3N25/FTP3N25/WFP3N25
HM8N25K	N沟道	250V	20V	3V	8A	32A	0.36Ω	TO-252	FQD8N25/AOD8N25/TMD8N25
HM15N25/F/K	N沟道	250V	20V	3V	15A	45A	0.18Ω	TO-220/TO-220F TO-252	MDD15N25/ME15N25
HM630	N沟道	200V	30V	3V	9A	36A	0.35Ω	TO-220	IRF630
HM640	N沟道	200V	30V	3V	18A	72A	0.12Ω	TO-220	IRF640

Remarks:

1. The marked Id current is the maximum normal current of the MOS chip. The maximum normal current in actual use is also limited by the maximum current of the package. Therefore, the maximum current limit of the package shall be considered when the customer designs the product. It is suggested that the customer should consider the internal resistance parameter of MOS more importantly when designing the product.

2. It is recommended that a resistor (10K) and a voltage stabilizing diode (5V-12V) be connected between the gate source (G/S) poles of MOS to protect the overvoltage of the gate source (G/S) pole.

3. It is recommended to increase the opening voltage of MOS tube as much as possible, so that MOS tube can be fully opened and conducted. At this time, the internal resistance is minimum, and it is not easy to get hot. It is generally recommended that the VGS opening voltage of low voltage MOS should be set above 4.5V, and the opening voltage of medium and high voltage MOS should be set above 10V

4. Precautions for MOS circuit operation:

Static electricity can be generated in many places. The following precautions can effectively prevent damage to MOS circuits caused by static discharge:

• Operators shall be grounded through anti-static wrist strap.

• The equipment enclosure must be grounded.

• Tools used during assembly must be grounded.

• Must be packed or transported with conductor or anti-static materials

Our HM2301/SOT-23/3A/20V/PMOS has the following advantages: it has a current of 3A and small internal resistance, which is different from the low-end 1A product in the market. It can be used in mobile power supply/charger/multi section protection board/home appliances/aeromodelling/remote control toys and other high current/low internal resistance applications.

Our HM2302/SOT-23/3A/20V/NMOS has the following advantages: it has a current of 3A and small internal resistance, which is different from the low-end 1A product in the market. It can be used in mobile power supply/charger/multi section protection board/home appliances/aeromodelling/remote control toys and other high current/low internal resistance applications.

Our HM3400/SOT-23-3L/5.8A/30V/NMOS has the following advantages: it is packaged with 5.8A current/large SOT-23, with small internal resistance. Different from the small SOT-23 at the low end of the market, it can be used for mobile power supply/charger/multi section protection board/home appliances/aeromodelling/remote control toys and other high current/low internal resistance applications.

Our HM3401/SOT-23-3L/4.2A/30V/PMOS has the following advantages: it is packaged with 4.2A current/large SOT-23, with small internal resistance. Different from the small SOT-23 at the low end of the market, it can be used for mobile power supply/charger/multi section protection board/home appliances/aeromodelling/remote control toys and other high current/low internal resistance applications.

Our HM2310/SOT-23-3L/3A/60V/NMOS has the following advantages: 1. The withstand voltage can reach 60V, sufficient for 3A current, and it is packaged with large SOT-23. 2. It can be used for LED lighting and other products with high voltage resistance.

Our HM4953 has the advantages of large current and small internal resistance, which can be used in the full color screen market.

Our HM4430 has the advantages of large current, small internal resistance and current up to 18A. It is one of the products with the largest SOP8/NMOS current on the market.

The advantage of our HM4440 is that the withstand voltage can reach 60V, which is one of the largest SOP8/NMOS withstand voltage products on the market.

Advantages of HM8810E/SOT-26&TSSOP8/7A/20V/dual N MOS: It has a current of 7A and ESD static protection. Compared with the 8205 on the market, the current is larger and the internal resistance is smaller. It can directly replace AO8810/AO8820/AO8822/SSF2418E/SSF2816E. It is mainly used in high-end lithium battery protection board/mobile phone battery/multi section protection board/mobile power supply/charger/home appliances/aeromodelling/remote control toys and other high current/low internal resistance applications.

Product application:

1. MP3/MP4/MP5/PMP player

2.MID/UMPC

3. GPS/Bluetooth headset

4. PDVD/on-board DVD/car audio

5. LCD TV/LCD display

6. Mobile power supply/electronic cigarette

7. Mobile phone battery, lithium battery protection board

8. LED lighting/LED power supply

9. LED display

10. Smart charger

11. Small household appliances, household appliances control panel