SOT-89 N-MOSFET

P/N CH Package ESD
Protection
Process VDS VGS ID VGS(th) RDS(on) RDS(on) RDS(on) Stage Remark
(V) (V) (A) Min.(V) Max.(V) @10V Typ. @4.5V Typ. @2.5V Typ.
PJM3400NSQ N SOT-89 N/A Trench 30 ±12 5.8 0.7 1.4 20mΩ 22mΩ   MP  
PJM3404NSQ N SOT-89 N/A Trench 30 ±20 5.8 1.2 2.4 25mΩ 32mΩ   MP  
PJM20N30SQ N SOT-89 N/A Trench 30 ±20 20 0.5 1.5 20mΩ@10V/15A 30mΩ@4.5V/15A   MP  
PJM06N40SQ N SOT-89 N/A Trench 40 ±20 6 0.9 1.8 27(Max.) 35(Max.)   MP  
PJM02N60SQ N SOT-89 N/A Trench 60 ±20 2 1 2.5 115mΩ 125mΩ   MP  
PJM03N60SQ N SOT-89 N/A Trench 60 ±20 3 1 2.5 68mΩ 80mΩ   MP  
PJM05N60SQ N SOT-89 N/A Trench 60 ±20 5 1.2 2.5 30mΩ 40mΩ   MP  
PJM10N60SQ N SOT-89 N/A Trench 60 ±20 10 1 2.5 25mΩ 30mΩ   MP  
PJM20N60SQ N SOT-89 N/A Trench 60 ±20 20 1 2.5 25mΩ 30mΩ   MP  
PJM10H02NSQ N SOT-89 N/A Trench 100 ±20 2 1.2 2.5 220mΩ     MP  
PJM03N10SQ N SOT-89 N/A Trench 100 ±20 3 1 2 180mΩ 200mΩ   MP  
PJM10H10NSQ N SOT-89 N/A Trench 100 ±20 6 1 2.5 92mΩ 99mΩ   MP  
PJM10H10BNSQ N SOT-89 N/A Trench 100 ±20 8 1 2.5 75mΩ 88mΩ   EP  
PJM20H03NSQ N SOT-89 N/A Trench 200 ±20 3 1 2.5 860(Max.) 910(Max.)   EP  
PJM65H0A5NSQ N SOT-89 N/A Trench 650 ±20 0.5 0.5 1.5 30Ω(Max.) 30Ω(Max.)   MP