SOT-23-6 DUAL N MOSFET

P/N CH Package ESD
Protection
Process VDS VGS ID VGS(th) RDS(on) RDS(on) RDS(on) Stage Remark
(V) (V) (A) Min.(V) Max.(V) @10V Typ. @4.5V Typ. @2.5V Typ.
PJM4602DNSG N Double SOT-23-6 N/A Trench 20 ±12 3 0.4 1.2   27mΩ(Max.) 44mΩ(Max.) MP  
PJM4602DNSG-S N Double SOT-23-6 N/A Trench 20 ±12 2 0.4 1.2   48mΩ 60mΩ MP  
PJM04DN20SG N Double SOT-23-6 N/A Trench 20 ±12 4 0.45 1   25mΩ 31mΩ MP  
PJM4612DNSG N Double SOT-23-6 N/A Trench 20 ±10 6.5 0.5 1.2   20mΩ 25mΩ MP  
PJM8810DNSG N Double SOT-23-6 Y Trench 20 ±10 7 0.45 1 15mΩ 17mΩ 21mΩ MP  
PJM8205DNSG N Double SOT-23-6 N/A Trench 20 ±12 6 0.4 1   21mΩ(Max.) 28mΩ(Max.) MP  
PJM8205DNSG-S N Double SOT-23-6 N/A Trench 19 ±12 5 0.4 1   20mΩ 26mΩ MP  
PJM8205JDNSG-S N Double SOT-23-6 N/A Trench 20 ±12 5 0.5 1.2   23mΩ 28mΩ MP  
PJM07DN20BSG N Double SOT-23-6 N/A Trench 20 ±12 6.5 0.4 1   16mΩ 20mΩ EP  
PJM2007DNSG N Double SOT-23-6 N/A Trench 20 ±12 7 0.5 1   14mΩ 18mΩ MP  
PJM08DN20BSG N Double SOT-23-6 N/A Trench 20 ±12 8 0.4 1   9mΩ 11.5mΩ EP  
PJM6802DNSG N Double SOT-23-6 N/A Trench 30 ±20 3.6 1.2 2.2 36mΩ 58mΩ   MP  
PJM6800DNSG N Double SOT-23-6 N/A Trench 30 ±12 5.8 0.7 1.4 21mΩ 23mΩ   MP  
PJM6804DNSG N Double SOT-23-6 N/A Trench 30 ±12 5 1 2.5 24mΩ 30mΩ   MP