SOT-23-6 N+P MOSFET

SPEC Type Technology Channel ESD保护 VDS VGS ID PD VGS(th) RDS(on)(mΩ) Package
(V) (V) (A) (W) Min.(V) Max.(V) Max.@VGS=10V Max.@VGS=4.5V Max.@VGS=2.5V
PJM6601CSG Trench N+P N ±30 ±20 3.6/-2 1.2 1.2/-1 2.2/-2.5 50/130 73/180 - SOT-23-6
PJM6807CSG Trench N+P N ±30 ±12/±20 5.8/-4.1 1.2 0.7/-1 1.4/-3 41/60 45/87 - SOT-23-6
PJM4603CSG Trench N+P N ±20 ±12 ±3 0.8 0.4/-0.4 1/-1 - 30/110 55/140 SOT-23-6