PJ N-MOSFET+BJT

Specification Type Channel ESD保护en VDS VGS ID VGS(th) RDS(on)(mΩ) Polarity VCBO VCEO VEBO IC hFE VCE(sat) Package
(V) (V) (A) Min.(V) Max.(V) Max.@VGS=10V Max.@VGS=4.5V Max.@VGS=2.5V (V) (V) (V) (A) (V)
PJMT23DFA N Y 20 ±12 0.8 0.35 1.1 - 300 350 PNP -40 -25 -6